Proceedings of the 11th International Conference on Narrow Gap Semiconductors held in Buffalo, NY, USA 16-20 June 2003 - Foreword

被引：0

作者：

McCombe, BD ^{[1
]}

Meyer, JR ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期

关键词：

D O I：

10.1016/j.physe.2003.09.011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：V / V

页数：1

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