Preparation and humidity-sensing properties of nanostructured potassium tantalate thin films

被引：9
|
作者：
Tai, WP [1 ]
Kim, JG
Oh, JH
Lee, C
Park, DW
Ahn, WS
机构：
[1] Inha Univ, Inst Adv Mat, Inchon 402751, South Korea
[2] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea
[3] Inha Univ, Sch Chem Engn & Biotechnol, Inchon 402751, South Korea
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2004年 / 15卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1023/A:1026232702889
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanostructured potassium tantalate (KT) thin films are prepared using a sol-gel process and the humidity-sensing behaviors of the films are investigated. The films possessed nanosized grains and nanoporous structure. The KT film annealed at 500 degreesC showed high humidity sensitivity with nearly three orders change in the resistance during the relative humidity variation from 20% to 90%. The humidity-sensing behaviors of the thin films with annealing temperature are discussed. (C) 2004 Kluwer Academic Publishers.
引用
收藏
页码：25 / 28
页数：4
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