703-nm InGaAsP quantum-well ridge-waveguide lasers

被引：3
|
作者：
Nomoto, E. [1 ]
Taniguchi, T. [1 ]
Sasaki, S. [2 ]
Kasai, J. [1 ]
Ohtoshi, T. [1 ]
Aoki, M. [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan
[2] Opnext Japan Inc, Kokubunji, Tokyo 1858601, Japan
来源：
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ICIPRM.2007.381215
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InGaAsP/AlGaInP quantum-well (QW) laser emitting at 703 nm on a GaAs substrate was demonstrated. Although quaternary InGaAsP is reported to have an immiscible region, compressively strained, thin InGaAsP was successfully grown on a GaAs' substrate as an active layer. The ridge-waveguide structure of the laser has a 2-mu m stripe and achieves extremely low operating current at a 40-mW CW from 20 to 80 degrees C with a characteristic temperature of 151 K. These InGaAsP QW lasers have been operating for over 640 hours during a 40-mW-constant-power CW life test at 40 degrees C. This laser diode is suitable as a light source for spectroscopic measurement due to its single longitudinal mode and stable fundamental lateral transverse mode.
引用
收藏
页码：426 / 429
页数：4
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