ON-WAFER DEEMBEEDDING TECHNIQUES WITH APPLICATION TO HEMT DEVICES CHARACTERIZATION

被引：0

作者：

Lu, Haiyan ^{[1
,2
]}

Wang, Weibo ^{[1
,2
]}

Zhou, Jianjun ^{[1
,2
]}

Chen, Tangshen ^{[1
,2
]}

Chen, Chen ^{[2
]}

机构：

[1] Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China

[2] Nanjing Elect Device Inst Nanjing, Nanjing 210016, Jiangsu, Peoples R China

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two different deem bedding methods, including open-short method and open-short-Ioad+c deembedding method are discussed in this paper. These deembedding techniques are used to remove all parasitic elements of the device. Comparisons between open-short-Ioad+c and open-short method were made using measured and simulated data on InP HEMT. The results indicate that better accuracy is achieved using open-short-Ioad+c method on high frequency.

引用

页数：3

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