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Single-Layer Behavior and Its Breakdown in Twisted Graphene Layers
被引:560
|作者:
Luican, A.
[1
]
Li, Guohong
[1
]
Reina, A.
[2
]
Kong, J.
[3
]
Nair, R. R.
[4
]
Novoselov, K. S.
[4
]
Geim, A. K.
[4
,5
]
Andrei, E. Y.
[1
]
机构:
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[4] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
[5] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
基金:
英国工程与自然科学研究理事会;
美国国家科学基金会;
关键词:
SCANNING-TUNNELING-MICROSCOPY;
LARGE-AREA;
GRAPHITE;
FILMS;
D O I:
10.1103/PhysRevLett.106.126802
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding similar to 3 degrees the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20 degrees the layers effectively decouple and the electronic properties are indistinguishable from those in single-layer graphene, while for smaller angles we observe a slowdown of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist-induced van Hove singularities and the Dirac fermions eventually become localized. An unexpected electron-hole asymmetry is observed which is substantially larger than the asymmetry in either single or untwisted bilayer graphene.
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