Analysis of self-heating effects on partially depleted silicon on aluminum nitride MOSFETs

被引：0
|
作者：
Osman, MA [1 ]
Osman, AA [1 ]
机构：
[1] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99164 USA
来源：
1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE | 1998年
关键词：
D O I：
10.1109/HITEC.1998.676782
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
The electrical and thermal properties of Silicon on Aluminum Nitride MOSFETs were investigated using two dimensional numerical simulation. The high thermal conductivity of AIN allows heat flow to the substrate at rates similar or higher than bulk silicon. The simulations reveal thermal distribution similar to bulk MOSFET, no negative conductance, and no reduction in saturation current compared to conventional SOI MOSFET.
引用
收藏
页码：169 / 171
页数：3
相关论文
共 50 条
  • [21] New insights on the cryogenic self-heating of silicon MOSFETs:: Thermal resistance of the ceramic package
    De la Hidalga, FJ
    Cortés, FJ
    Deen, MJ
    LOW TEMPERATURE ELECTRONICS AND LOW TEMPERATURE COFIRED CERAMIC BASED ELECTRONIC DEVICES, 2004, 2003 (27): : 30 - 43
  • [22] USE OF NOISE THERMOMETRY TO STUDY THE EFFECTS OF SELF-HEATING IN SUBMICROMETER SOI MOSFETS
    BUNYAN, RJT
    UREN, MJ
    ALDERMAN, JC
    ECCLESTON, W
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) : 279 - 281
  • [23] Impact of high-k plug on self-heating effects of SOI MOSFETs
    Komiya, K
    Kawamoto, T
    Sato, S
    Omura, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) : 2249 - 2251
  • [24] Comparison of self-heating effect in GAA and SOI mosfets
    Francis, P
    Colinge, JP
    Flandre, D
    MICROELECTRONICS RELIABILITY, 1997, 37 (01) : 61 - 75
  • [25] A lumped transient thermal model for self-heating in MOSFETs
    Sabry, MN
    Fikry, W
    Salam, KA
    Awad, MM
    Nasser, AE
    MICROELECTRONICS JOURNAL, 2001, 32 (10-11): : 847 - 853
  • [26] Evidence of reduced self-heating in strained Si MOSFETs
    Nicholas, G
    Grasby, TJ
    Parker, EHC
    Whall, TE
    Skotnicki, T
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) : 684 - 686
  • [27] Self-heating effects in polycrystalline silicon thin film transistors
    Valletta, Antonio
    Moroni, Alessandro
    Mariucci, Luigi
    Bonfiglietti, Alessandra
    Fortunato, Guglielmo
    APPLIED PHYSICS LETTERS, 2006, 89 (09)
  • [28] Determination of Self-Heating in Silicon Photomultipliers
    Garutti, Erika
    Martens, Stephan
    Schwandt, Joern
    Villalba-Pedro, Carmen
    SENSORS, 2024, 24 (09)
  • [29] Spatial Distribution Analysis of Self-Heating Effect in High-Voltage MOSFETs
    Kajiwara, Takahiro
    Miyake, Masataka
    Sadachika, Norio
    Kikuchihara, Hideyuki
    Feldmann, Uwe
    Mattausch, Hans Juergen
    Miura-Mattausch, Mitiko
    APEC: 2009 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1- 4, 2009, : 1687 - 1691
  • [30] Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels
    Park, Jun-Young
    Lee, Byung-Hyun
    Chang, Ki Soo
    Kim, Dong Uk
    Jeong, Chanbae
    Kim, Choong-Ki
    Bae, Hagyoul
    Choi, Yang-Kyu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (11) : 4393 - 4399
12345