Analysis of self-heating effects on partially depleted silicon on aluminum nitride MOSFETs

被引：0
|
作者：
Osman, MA [1 ]
Osman, AA [1 ]
机构：
[1] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99164 USA
来源：
1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE | 1998年
关键词：
D O I：
10.1109/HITEC.1998.676782
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
The electrical and thermal properties of Silicon on Aluminum Nitride MOSFETs were investigated using two dimensional numerical simulation. The high thermal conductivity of AIN allows heat flow to the substrate at rates similar or higher than bulk silicon. The simulations reveal thermal distribution similar to bulk MOSFET, no negative conductance, and no reduction in saturation current compared to conventional SOI MOSFET.
引用
收藏
页码：169 / 171
页数：3
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