Chaotic memristor

被引:43
|
作者
Driscoll, T. [1 ]
Pershin, Y. V. [2 ,3 ]
Basov, D. N. [1 ]
Di Ventra, M. [1 ]
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA
[3] Univ S Carolina, USC Nanoctr, Columbia, SC 29208 USA
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 102卷 / 04期
基金
美国国家科学基金会;
关键词
LYAPUNOV EXPONENTS; CROSSBAR ARRAYS; CIRCUITS; MEMCAPACITORS; MEMINDUCTORS; OSCILLATOR; SYSTEMS;
D O I
10.1007/s00339-011-6318-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in a multi-well potential. Using a memristor emulator, the chaotic memristor is realized and its chaotic properties are measured. A Poincar, plot showing chaos is presented for a simple nonautonomous circuit involving only a voltage source directly connected in series to a memristor and a standard resistor. We also explore theoretically some details of this system, plotting the attractor and calculating Lyapunov exponents. The multi-well potential used resembles that of many nanoscale memristive devices, suggesting the possibility of chaotic dynamics in other existing memristive systems.
引用
收藏
页码:885 / 889
页数:5
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