Free carrier lifetime modification in silicon

被引：3

作者：

Wright, N. M. ^{[1
]}

Thomson, D. J. ^{[1
]}

Litvinenko, K. L. ^{[1
]}

Headley, W. R. ^{[1
]}

Smith, A. J. ^{[1
]}

Knights, A. P. ^{[2
]}

Deane, J. H. B. ^{[3
]}

Gardes, F. Y. ^{[1
]}

Mashanovich, G. Z. ^{[1
]}

Gwilliam, R. ^{[1
]}

Reed, G. T. ^{[1
]}

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

[3] Univ Surrey, Dept Math & Stat, Guildford GU2 7XH, Surrey, England

来源：

SILICON PHOTONICS IV | 2009年 / 7220卷

基金：

英国工程与自然科学研究理事会;

关键词：

Waveguides; Integrated optoelectronic circuits; optical amplifiers; NONLINEAR ABSORPTION; AMPLIFICATION;

D O I：

10.1117/12.810907

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the effects of silicon ion irradiation on free carrier lifetime and propagation loss in silicon rib waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers, an undesired effect of the Raman process in crystalline silicon. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted silicon ions can be kept low if irradiation energy and dose are correctly chosen. Simulations of Raman amplification in silicon rib waveguides suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to sweep out the photo-generated free carriers.

引用

页数：8

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