Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

被引：24
|
作者：
Jarndal, Anwar [1 ]
Ghannouchi, Fadhel M. [2 ]
机构：
[1] Univ Sharjah, Dept Elect & Comp Engn, Sharjah 27272, U Arab Emirates
[2] Univ Calgary, Dept Elect & Comp Engn, iRadio Lab, Calgary, AB T2N 1N4, Canada
来源：
SOLID-STATE ELECTRONICS | 2016年 / 123卷
关键词：
GaN HEMT; Large-signal modeling; Thermal and trapping effects; Genetic optimization; Power amplifier design; ALGAN/GAN; DISPERSION;
D O I：
10.1016/j.sse.2016.05.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an improved modeling approach has been developed and validated for GaN high electron mobility transistors (HEMTs). The proposed analytical model accurately simulates the drain current and its inherent trapping and thermal effects. Genetic-algorithm-based procedure is developed to automatically find the fitting parameters of the model. The developed modeling technique is implemented on a packaged GaN-on-Si HEMT and validated by DC and small-/large-signal RF measurements. The model is also employed for designing and realizing a switch-mode inverse class-F power amplifier. The amplifier simulations showed a very good agreement with RF large-signal measurements. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：19 / 25
页数：7
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