Modeling of Trapping Effects in GaN HEMTs

被引：0
|
作者：
Agnihotri, Shantanu [1 ]
Ghosh, Sudip [1 ]
Dasgupta, Avirup [1 ]
Ahsan, Sheikh Aamir [1 ]
Khandelwal, Sourabh [2 ]
Chauhan, Yogesh Singh [1 ]
机构：
[1] Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA USA
来源：
2015 ANNUAL IEEE INDIA CONFERENCE (INDICON) | 2015年
关键词：
Trapping; Switching Collapse; Current Collapse; GaN HEMT;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this work, we study the trapping in GaN power HEMTs and discuss effect of traps on device characteristics. Simulation setups for analysis of switching collapse and current collapse observed in pulsed I-V are also presented. We propose an RC network based trap model to capture the effect of trapping in a surface potential based compact model for GaN HEMTs. The proposed model has been verified with the hardware data for various quiescent biases and frequencies, and the model results are in excellent agreement with the hardware data.
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页数：4
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