Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

被引：14

作者：

Pozina, G. ^{[1
]}

Hemmingsson, C. ^{[1
]}

Paskov, P. P. ^{[1
]}

Bergman, J. P. ^{[1
]}

Monemar, B. ^{[1
]}

Kawashima, T. ^{[2
]}

Amano, H. ^{[2
]}

Akasaki, I. ^{[2
]}

Usui, A. ^{[3
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, IFM, S-58183 Linkoping, Sweden

[2] Meijo Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan

[3] Furukawa Co Ltd, R&D Div, Tsukuba 3050856, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

D O I：

10.1063/1.2909541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra for the annealed samples. The temporal changes in PL are permanent at low temperatures; however, they can be recovered after heating to 100 K or higher. (C) 2008 American Institute of Physics.

引用

页数：3

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