256-pixel CMOS-integrated thermoelectric infrared sensor array

被引：12

作者：

Schaufelbuehl, A ^{[1
]}

Münch, U ^{[1
]}

Menolfi, C ^{[1
]}

Brand, O ^{[1
]}

Paul, O ^{[1
]}

Huang, Q ^{[1
]}

Baltes, H ^{[1
]}

机构：

[1] ETH Zurich, Phys Elect Lab, CH-8093 Zurich, Switzerland

来源：

14TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2001年

关键词：

D O I：

10.1109/MEMSYS.2001.906513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a micromachined 16 x 16 array of thermoelectric infrared sensors fabricated in a commercial CMOS IC process with subsequent bulk-micromachining on wafer-scale. Each pixel contains an integrated heater, which makes calibration and self-testing possible. Addressing circuitry and four low-noise amplifiers are cointegrated with the array on a single chip with a size of 7.4 x 12 mm(2). A thermal imager, based on the infrared sensor-array, operates in ambient air, without thermal stabilization or cooling. The thermoelectric sensor principle allows to measure DC radiation signals even without a radiation chopper. The temperature resolution achieved at 1 Hz framerate is 176 mK.

引用

页码：200 / 203

页数：2

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