Self-Heating and Failure in Scalable Graphene Devices

被引：20

作者：

Beechem, Thomas E. ^{[1
]}

Shaffer, Ryan A. ^{[1
]}

Nogan, John ^{[1
]}

Ohta, Taisuke ^{[1
]}

Hamilton, Allister B. ^{[1
]}

McDonald, Anthony E. ^{[1
]}

Howell, Stephen W. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87123 USA

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

关键词：

EPITAXIAL GRAPHENE; ELECTRICAL BREAKDOWN; GROWTH; DECOMPOSITION; MONOLAYER; OXIDATION; MOBILITY; OXYGEN; LAYERS;

D O I：

10.1038/srep26457

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

引用

页数：8

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