Polymer space-charge-limited transistor as a solid-state vacuum tube triode

被引：28

作者：

Chao, Yu-Chiang ^{[3
]}

Ku, Ming-Che ^{[1
,2
]}

Tsai, Wu-Wei ^{[1
,2
]}

Zan, Hsiao-Wen ^{[1
,2
]}

Meng, Hsin-Fei ^{[3
]}

Tsai, Hung-Kuo ^{[4
]}

Horng, Sheng-Fu ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

[4] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期

关键词：

HIGH-PERFORMANCE;

D O I：

10.1063/1.3513334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3 x 10(5) at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/cm(2) with current gain greater than 1000. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3513334]

引用

页数：3

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