EXAFS and SR-XRD study on Mn occupations in Zn1-xMnxO diluted magnetic semiconductors

被引:3
|
作者
Li, M. [1 ,2 ]
Zhang, B. [1 ,2 ]
Wang, J. Z. [1 ,2 ]
Shi, L. Q. [1 ,2 ]
Cheng, H. S. [1 ,2 ]
Wang, Y. Z. [1 ,2 ]
Lv, H. Y. [1 ,2 ]
Yang, T. Y. [3 ]
Wen, W. [3 ]
Hu, F. C. [4 ]
机构
[1] Fudan Univ, Inst Modern Phys, Minist Educ, Appl Ion Beam Phys Lab,Key Lab, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Nucl Sci & Technol, Shanghai 200433, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China
[4] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
基金
中国国家自然科学基金;
关键词
EXAFS; SR-XRD; PIXE; Mn occupations; ZnO DMS; ROOM-TEMPERATURE FERROMAGNETISM; DOPED ZNO; IONS IMPLANTATION; THIN-FILMS; GAN FILM; PIXE; ORIGIN;
D O I
10.1016/j.nimb.2011.07.094
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Mn-doped ZnO films were prepared by radio frequency (RF) magnetron sputtering on sapphire substrate. Mn content was determined by proton induced X-ray emission (PIXE). Only Mn, no other magnetic impurities such as Fe, Co and Ni were observed. Also, no precipitates such as MnO, Mn3O4 and other secondary phases or Mn clusters, were found by SR-XRD, even in Mn-doped content up to 11 at.%. EXAFS analyses showed that Mn atoms were incorporated into ZnO crystal lattice by occupying the sites of zinc atoms. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:2610 / 2613
页数:4
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