Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

被引：44
|
作者：
Wang, C. H. [1 ,2 ]
Lin, D. W. [1 ,2 ]
Lee, C. Y. [1 ,2 ]
Tsai, M. A. [3 ]
Chen, G. L. [1 ,2 ]
Kuo, H. T. [1 ,2 ]
Hsu, W. H. [1 ,2 ]
Kuo, H. C. [1 ,2 ]
Lu, T. C. [1 ,2 ]
Wang, S. C. [1 ,2 ]
Chi, G. C. [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 08期
关键词：
Current spreading; efficiency droop; high voltage; light-emitting diodes;
D O I：
10.1109/LED.2011.2153176
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The efficiency and electrical characteristics of GaN-based high-voltage light-emitting diodes (HV-LEDs) are investigated in detail. The spatial distribution of light output and simulation results showed that 100-V HV-LED with smaller microchips had superior current spreading. As a result, under 1-W operation, the luminous efficiency of 100-V HV-LED with smaller microchips was enhanced by 7.8% compared to that of 50-V HV-LED, while the efficiency droop behaviors were reduced from 28% in 50-V HV-LED to 25.8% in 100-V HV-LED. Moreover, smaller microchips exhibited lower series resistance and forward voltage, leading to higher wall-plug efficiency.
引用
收藏
页码：1098 / 1100
页数：3
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