Rib waveguides containing Si nanocrystals embedded in SiO2 for optical communication in the visible range.

被引：0

作者：

Pellegrino, P ^{[1
]}

Garrido, B ^{[1
]}

Garcia, C ^{[1
]}

Morante, JR ^{[1
]}

机构：

[1] Univ Barcelona, Dept Elect, EME, E-08028 Barcelona, Spain

来源：

2005 Spanish Conference on Electron Devices, Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a study on characterization and modelling of the structural and optical properties of rib-loaded waveguides working in the 600-900 nrn spectral range. The active layer was produced by Si+ ion implantation into SiO2. Si-ncs were precipitated by annealing at 1100 degrees C, forming a 0.4 mu m thick core layer in the waveguide. The Si-nc density, size and visible emission and the effective refractive index of the active layer were determined by dedicated experiments. Light propagation in the waveguide was observed at 633 and 780 nm and losses of about 10 dB/cm were been related to specific contributions, mostly geometric-related, and asymptotic values of 2 dB/cm for Mie scattering and 4 dB/cm for direct absorption were evaluated, which are promising for the feasibility of a competitive optical amplifier.

引用

页码：327 / 330

页数：4

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