Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates

被引：5

作者：

Lebedev, A. A. ^{[1
]}

Abramov, P. L. ^{[1
]}

Agrinskaya, N. V. ^{[1
]}

Kozub, V. I. ^{[1
]}

Kuznetsov, A. N. ^{[1
]}

Lebedev, S. P. ^{[1
]}

Oganesyan, G. A. ^{[1
]}

Sorokin, L. M. ^{[1
]}

Chernyaev, A. V. ^{[1
]}

Shamshur, D. V. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063785007120152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial 3C-SiC films have been grown on 6H-SiC substrates by sublimation epitaxy in vacuum. The Hall effect in these heterostructures and their magnetoresistance have been measured in a temperature range from 1.4 to 300 K. At liquid-helium temperatures, the samples are characterized by low resistance and exhibit negative magnetoresistance in weak fields (similar to 1 T). Analysis of the experimental results suggests that the low resistance of samples is most probably due to the metal-insulator transition in the epitaxial 3C-SiC films.

引用

页码：1035 / 1037

页数：3

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