Theoretical approach to frequency response of resonant-cavity avalanche photodiodes

被引:5
|
作者
Xiao, YG [1 ]
Deen, MJ [1 ]
机构
[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
来源
关键词
avalanche photodiode; resonant-cavity; frequency response; bandwidth; photodetectors; semiconductor device modeling; optoelectronic devices; optical fiber communication systems;
D O I
10.1117/12.429434
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
An efficient theoretical approach incorporating the mechanism of resonant absorption of the multiple reflected lightwaves is presented to model the frequency response of resonant-cavity (RC) avalanche photodiodes (APDs). Although the theoretical expressions are derived with respect to the RC separate absorption, charge and multiplication (SACM) structure, they are actually very general and can be applied to other RC APD structures and many non-RC APDs. As an example, the theoretical approach is applied to the InGaAs/InAlAs RC SACM APD. The computation results of -3 dB bandwidth based on the present theoretical approach are consistent with the experiment.
引用
收藏
页码:21 / 30
页数:4
相关论文
共 50 条
  • [41] RESONANT-CAVITY ENHANCED PHOTONIC DEVICES
    UNLU, MS
    STRITE, S
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 607 - 639
  • [42] Resonant-cavity approach to noninvasive, pulse-to-pulse emittance measurement
    Kim, JS
    Nantista, CD
    Miller, RH
    Weidemann, AW
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (12): : 1 - 13
  • [43] Frequency response and design consideration of GaN SAM avalanche photodiodes
    Feng Xie
    Guofeng Yang
    Dong Zhou
    Hai Lu
    Guosheng Wang
    Applied Physics A, 2016, 122
  • [44] Frequency response and design consideration of GaN SAM avalanche photodiodes
    Xie, Feng
    Yang, Guofeng
    Zhou, Dong
    Lu, Hai
    Wang, Guosheng
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (11):
  • [45] TIME AND FREQUENCY-RESPONSE OF AVALANCHE PHOTODIODES WITH ARBITRARY STRUCTURE
    KAHRAMAN, G
    SALEH, BEA
    SARGEANT, WL
    TEICH, MC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) : 553 - 560
  • [46] FREQUENCY-RESPONSE OF INP/INGAASP/INGAAS AVALANCHE PHOTODIODES
    CAMPBELL, JC
    JOHNSON, BC
    QUA, GJ
    TSANG, WT
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1989, 7 (05) : 778 - 784
  • [47] FREQUENCY-RESPONSE OF AVALANCHE PHOTODIODES - DIFFUSION CURRENT DEPENDENCE
    TAKAMIYA, S
    KONDO, A
    SHIRAHATA, K
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1975, 58 (12): : 102 - 109
  • [48] Electrical characteristics of the resonant-cavity separate absorption, charge, and multiplication avalanche photodetector improved by device optimization
    Kim, Dong Ho
    Roh, Cheong Hyun
    Song, Hong Joo
    Kim, Hoon
    Hanh, Cheol-Koo
    Leem, Shi Jong
    Kim, Tae Geun
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (03) : 880 - 884
  • [49] Design and performance of high temperature operating resonant-cavity photodiodes based on 795 nm-VCSEL structure
    Zhao, Yongming
    Sun, Yurun
    He, Yang
    Yu, Shuzhen
    Dong, Jianrong
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (12): : 3136 - 3141
  • [50] MEASUREMENT OF MATERIAL PROPERTIES WITH A TUNABLE RESONANT-CAVITY
    KAJFEZ, D
    GUNDAVAJHALA, A
    ELECTRONICS LETTERS, 1993, 29 (22) : 1936 - 1937