Theoretical approach to frequency response of resonant-cavity avalanche photodiodes

被引：5
|
作者：
Xiao, YG [1 ]
Deen, MJ [1 ]
机构：
[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
来源：
PHOTODETECTORS: MATERIALS AND DEVICES VI | 2001年 / 4288卷
关键词：
avalanche photodiode; resonant-cavity; frequency response; bandwidth; photodetectors; semiconductor device modeling; optoelectronic devices; optical fiber communication systems;
D O I：
10.1117/12.429434
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
An efficient theoretical approach incorporating the mechanism of resonant absorption of the multiple reflected lightwaves is presented to model the frequency response of resonant-cavity (RC) avalanche photodiodes (APDs). Although the theoretical expressions are derived with respect to the RC separate absorption, charge and multiplication (SACM) structure, they are actually very general and can be applied to other RC APD structures and many non-RC APDs. As an example, the theoretical approach is applied to the InGaAs/InAlAs RC SACM APD. The computation results of -3 dB bandwidth based on the present theoretical approach are consistent with the experiment.
引用
收藏
页码：21 / 30
页数：4
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