Valley splitting in triangular Si(001) quantum wells

被引：21
|
作者：
Grosso, G
Parravicini, GP
Piermarocchi, C
机构：
[1] IST NAZL FIS MAT,I-56126 PISA,ITALY
[2] IST NAZL FIS MAT,I-27100 PAVIA,ITALY
[3] UNIV PAVIA,DIPARTIMENTO FIS,I-27100 PAVIA,ITALY
[4] ECOLE POLYTECH FED LAUSANNE,INST PHYS THEOR,CH-1015 LAUSANNE,SWITZERLAND
来源：
PHYSICAL REVIEW B | 1996年 / 54卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.54.16393
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Intervalley splitting in an n-channel Si(001) inversion layer is evaluated by means of a triangular quantum well which simulates the effect of a static electric field. All the microscopic interactions an included in the realistic tight-binding bulk Hamiltonian of the crystal to which the electric field is applied. Eigenvalues and projected densities of states in the triangular well are evaluated from the knowledge of the Green's function obtained by the renormalization procedure. We find that the valley splitting increases nonlinearly as the external field increases.
引用
收藏
页码：16393 / 16396
页数：4
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