Growth Mechanism of CdS Nano Films Prepared by Chemical Bath Deposition

被引:2
|
作者
Kong, Seon Mi [1 ]
Xiao, Yubin [1 ]
Kim, Eun Ho [1 ]
Chung, Chee Won [1 ]
机构
[1] Inha Univ, Dept Chem Engn, Inchon 402751, South Korea
关键词
Cadmium Sulfide; Chemical-Bath Deposition; Buffer Layer; Cu(In; Ga)(Se; S)(2) Thin-Film Solar Cell; THIN-FILMS; OPTICAL-PROPERTIES; SOLAR-CELLS; TEMPERATURE; LAYERS;
D O I
10.1166/jnn.2011.4384
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Deposition of CdS nanofilms was performed using the chemical bath deposition method, as a function of the concentration ratio of [S] to [Cd] (S/Cd) and of deposition temperature. As the S/Cd ratio and deposition temperature increased, the deposition rate of the films increased, and the transmittance was improved. With increasing S/Cd ratio, the crystallinity of the CdS nanofilms decreased due to the formation of small grains therein. Atomic force microscopy revealed that the surface morphology of the films became smooth with increasing S/Cd ratio and deposition temperature. The evolution of the grain formation showed that the slow deposition rate of the films leads to a small number of grains at the initial stage of the deposition, followed by fast grain growth, resulting in a rough surface. On the other hand, a fast deposition rate initially causes the formation of many grains on the entire surface as well as slow grain growth, making the films smooth. It is evident that the deposition rate affects the physical and optical properties of the films due to their different growth mechanisms.
引用
收藏
页码:6287 / 6292
页数:6
相关论文
共 50 条
  • [21] Growth process and properties of CdS thin films prepared by chemical bath deposition at different pH values
    Zhang, Linquan
    Jiang, Jinchun
    Wang, Wei
    Huang, Xiaoxu
    Yuan, Qi
    Hong, Ruijiang
    Cha, Limei
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (09) : 7637 - 7643
  • [22] Effects of complexing agent on CdS thin films prepared by chemical bath deposition
    Zhang, H
    Ma, XY
    Yang, DR
    MATERIALS LETTERS, 2004, 58 (1-2) : 5 - 9
  • [23] Structural and Optical Properties of CdS Thin Films Prepared By Chemical Bath Deposition
    Agrawal, P.
    Sachdeva, M.
    Singh, Anupinder
    Suthar, B.
    Bhargava, A.
    PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013), 2013, 1536 : 165 - +
  • [24] Growth process and properties of CdS thin films prepared by chemical bath deposition at different pH values
    Linquan Zhang
    Jinchun Jiang
    Wei Wang
    Xiaoxu Huang
    Qi Yuan
    Ruijiang Hong
    Limei Cha
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 7637 - 7643
  • [25] Effect of protic solvents on CdS thin films prepared by chemical bath deposition
    Yao, Pin-Chuan
    Chen, Chun-Yu
    THIN SOLID FILMS, 2015, 579 : 103 - 109
  • [26] Chemical bath deposition of CdS thin films: Growth and structural studies
    Zhu, YM
    Mao, D
    Williamson, DL
    Trefny, JU
    THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS, 1996, 426 : 227 - 232
  • [27] Preparation and Growth Mechanism of CdS Nanorods via Chemical Bath Deposition
    Zhou Jing
    Zhao Gaoling
    Yang Jinjian
    Han Gaorong
    RARE METAL MATERIALS AND ENGINEERING, 2010, 39 : 138 - 141
  • [28] Growth mechanisms and their effects on the opto-electrical properties of CdS thin films prepared by chemical bath deposition
    Slonopas, Andre
    Ryan, Herbert
    Foley, Benjamin
    Sun, Zeming
    Sun, Keye
    Globus, Tatiana
    Norris, Pamela
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 52 : 24 - 31
  • [29] Irradiation-induced persistent photoconductivity in CdS films prepared by chemical bath deposition
    Narayanan, KL
    Rajaraman, R
    Valsakumar, MC
    Vijayakumar, KP
    Nair, KGM
    OPTICAL MATERIALS, 2001, 17 (1-2) : 355 - 358
  • [30] Characterization and antibacterial capabilities of nanocrystalline CdS thin films prepared by chemical bath deposition
    Abd-Elkader, Omar H.
    Shaltout, Abdallah A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 35 : 132 - 138