Temperature dependence of defect mode in band structures of the one-dimensional photonic crystal

被引：14

作者：

Segovia-Chaves, Francis ^{[1
,2
]}

Vinck-Posada, Herbert ^{[1
]}

机构：

[1] Univ Nacl Colombia, Dept Fis, Bogota 055051, Colombia

[2] Univ Surcolombiana, Dept Ciencias Nat, Neiva 385, Colombia

来源：

OPTIK | 2018年 / 154卷

关键词：

Photonic crystal; Defect mode; Plane wave expansion method; TERAHERTZ RANGE; WAVELENGTH; FILTER; GAP;

D O I：

10.1016/j.ijleo.2017.10.030

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Using the plane wave expansion method the effect of temperature variation and the thickness of the defect in a one-dimensional photonic crystal consisting of alternate layers of silicon and air in the band structures has been investigated. The refractive index of silicon layers is taken as a function of temperature and wavelength. It is found that there exists defect mode within the forbidden frequency gap in the band structures. It is shown that increasing the temperature originates a defect mode shift in the band structure at low frequencies due to contrast increase of the refractive index. (C) 2017 Elsevier GmbH. All rights reserved.

引用

页码：467 / 472

页数：6

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