A CMOS T/R Switch Using a MOSFET Diode Pair for Linearity Improvement

被引：0

作者：

Chen, Cheng-Chung ^{[1
]}

Lin, Gao-Ching ^{[1
]}

机构：

[1] Ind Technol Res Inst, Hsinchu, Taiwan

来源：

2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2014年

关键词：

CMOS; Switch; diode; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a novel CMOS T/R switch topology scheme. The proposed scheme facilitates the diode connected transistor pair in realizing a high power handling off transistor and suppressing the channel forming signal to elevate IIP3 and input P1dB performance. The prototype without additional LC components and negative control voltage allows for the miniaturized integration of the T/R switch in a CMOS System on chip circuit. Finally, design examples fabricated with 0.181im CMOS technology demonstrate a 22.4dBm Piti1dB and 33dBm IIP3 performance to prove the effectiveness of the proposed switch configuration.

引用

页码：735 / 737

页数：3

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