Microwave Annealing of Ion Implanted 4H-SiC

被引：0
|
作者：
Rao, Mulpuri V. [1 ]
Nath, A. [1 ]
Qadri, S. B. [2 ]
Tian, Y-L. [3 ]
Nipoti, R. [4 ]
机构：
[1] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA
[2] Naval Res Lab, Washington, DC 20375 USA
[3] LT Technol, Fairfax, VA 22033 USA
[4] CNR, IMM, Sez Bologna, I-40129 Bologna, Italy
来源：
ION IMPLANTATION TECHNOLOGY 2010 | 2010年 / 1321卷
关键词：
4H-SiC; Phosphorous; post implantation annealing; electrical resistivity; X-ray diffraction; lattice recovery;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ultra-fast high-temperature microwave annealing at temperatures as high as 2050 degrees C for 30 s has been performed on phosphorus ion-implanted 4H-SiC for phosphorus doping concentrations in the range 5 x 10(19) cm-(3) -8 x 10(20) cm(-3). For comparison, inductive heating furnace anneals were performed at 1800 degrees C -1950 degrees C for 5 min. Electrical resistivity of the P+-implanted samples decreased with increasing annealing temperature reaching a minimum value of 6.8 x 10(-4) Omega cm for 2050 degrees C/30 s microwave annealing and a slightly higher value for 1950 degrees C/5 min inductive heating furnace annealing. X-ray rocking curve measurements showed that the microwave annealing not only removed the lattice damage introduced by the ion-implantation process, but also the defects present in the original virgin sample as well.
引用
收藏
页码：241 / +
页数：2
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