Growth, characterisation and surface cleaning procedures for high-purity tungsten single crystals

被引:40
|
作者
Cortenraad, R
Ermolov, SN
Semenov, VN
van der Gon, AWD
Glebovsky, VG
Bozhko, SI
Brongersma, HH
机构
[1] Eindhoven Univ Technol, Fac Phys, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia
关键词
tungsten; crystal growth; crystal structure; surface cleaning procedures;
D O I
10.1016/S0022-0248(00)00876-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
High-purity tungsten (W) single crystals have been prepared by the electron-beam floating zone melting technique. The structural quality of these crystals was subsequently improved by the application of a strain-annealing technique. X-ray diffraction methods revealed the near-perfect crystallographic structure, and confirmed the absence of first- and second-order subgrains. The observation of the anomalous transmission of X-rays through the thick crystals, also referred to as the Borrmann effect, further substantiated the structural perfection of the crystals. Well-ordered clean W surfaces free from all contaminants, were obtained by a two-step heating procedure. First, the crystals were heated to 1500 K in an oxygen atmosphere for the removal of the carbon impurities. Subsequent flashing to high temperatures (approximately 2500 K) removed the excess oxygen remaining on the surface from the carbon-removal procedure. Low-energy ion scattering and Auger electron spectroscopy confirmed that the cleaning procedures removed all impurities and that the crystal faces expose only tungsten in the outermost atomic layers. Low-energy electron diffraction patterns showed unreconstructed(1 x 1) surfaces for the main crystallographic orientations. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码:154 / 162
页数:9
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