Effect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition

被引:18
|
作者
Kim, KT [1 ]
Kim, CI [1 ]
机构
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
关键词
ferroelectric properties; dielectric properties; ionic radius; lanthanides substitutions;
D O I
10.1016/j.mseb.2004.12.035
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of lanthanides (A= La, Eu, Ce, Dy, Yb)- substitution on the ferroelectric properties of bismuth titanate (Bi(3.25)A(0.75)Ti(3)O(12), BAT) thin films has been investigated. The structure and morphology of the films were analyzed using X-ray diffraction and scanning electron microscopy, respectively. After annealing at 700 degrees C, the BAT films exhibited a polycrystalline structure. As a increasing the ionic radius of the lanthanides element (Eu, Ce) with a smaller ionic radius than La in the pseudoperovskite layer, the BAT thin films showed well saturated P-E curves and the remanent polarization (2P(r)) values increased from 8.08 and 44 mu C/cm(2) at an applied voltage of 10 V. The BAT thin films exhibited no significant degradation of switching charge at least up to 5 x 10(9) switching cycles at a frequency of 100 kHz. Moreover, the BAT film capacitors have appeared good retention properties after 3 x 10(4) s at room temperature. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:229 / 233
页数:5
相关论文
共 50 条
  • [31] Effect of Dysprosium Substitution on the Properties of Bismuth Titanate Thin Films Prepared by Sol-Gel Method
    Kao, M. C.
    Chen, H. Z.
    Young, S. L.
    Yu, C. C.
    Lin, C. H.
    Lin, C. C.
    Lee, C. M.
    FERROELECTRICS, 2009, 382 : 182 - 186
  • [32] Ferroelectric properties of bismuth lanthanum titanate (BLT) thin films processed at low temperature
    Kim, JS
    Kim, SS
    Song, TK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (04) : 548 - 552
  • [33] Effects of donor ion doping on the orientation and ferroelectric properties of bismuth titanate thin films
    Choi, EK
    Kim, SS
    Kim, JK
    Bae, JC
    Kim, WJ
    Lee, YI
    Song, TK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01): : 237 - 241
  • [34] Studies on structural and electro-optic properties of ferroelectric bismuth titanate thin films
    Jo, W.
    Cho, H.-J.
    Noh, T.W.
    Cho, Y.S.
    Kwun, S.-I.
    Ferroelectrics, 1994, 152 (1 -4 pt 2) : 139 - 144
  • [35] Bismuth-substituted barium titanate thin films prepared using chemical solution deposition
    He, Haiyan
    AMERICAN CERAMIC SOCIETY BULLETIN, 2007, 86 (08): : 9101 - U9
  • [36] Effect of porosity on the ferroelectric properties of sol-gel prepared lead zirconate titanate thin films
    Zhang, Q
    Corkovic, S
    Shaw, CP
    Huang, Z
    Whatmore, RW
    THIN SOLID FILMS, 2005, 488 (1-2) : 258 - 264
  • [37] The structural, dielectric and ferroelectric properties of La-modified bismuth titanate thin films prepared by sol-gel process
    Zhu, JG
    Yu, C
    Xiao, DQ
    Zhang, W
    Yuan, XW
    Zhu, JL
    Yue, X
    PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2001, : 579 - 582
  • [38] Effects of oxygen-plasma treatment on lanthanum-substituted bismuth titanate ferroelectric thin films
    Park, ER
    Lee, CE
    Yeom, SJ
    THIN SOLID FILMS, 2006, 497 (1-2) : 185 - 188
  • [39] Electrical properties of Bi4-xLaxTi3O12 ferroelectric thin films prepared by metalorganic decomposition method
    Yang, WS
    Kim, NK
    Yeom, SJ
    Kweon, SY
    Roh, JS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 727 - 730
  • [40] Microstructure and ferroelectric properties of fine-grained BaxSr1-xTiO3 thin films prepared by metalorganic decomposition
    Mohammed, MS
    Naik, R
    Mantese, JV
    Schubring, NW
    Micheli, AL
    Catalan, AB
    JOURNAL OF MATERIALS RESEARCH, 1996, 11 (10) : 2588 - 2593