Macroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer

被引:0
|
作者
Kim, Jae-Ho
Oh, Do-Hyun
Lee, Soo-Jin
Lee, Kyu-Hwan
Cho, Woon-Jo
Kim, Tae Whan
Park, Young Ju
机构
[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea
[2] Korea Adv Inst Sci & Technol, Future Res Div, Seoul 136791, South Korea
[3] MIT, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA
关键词
nanostructures; nanomaterials; semiconducting silicon;
D O I
10.1016/j.jcrysgro.2007.08.031
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Capacitance-voltage (C-P) and electrostatic force microscopy (EFM) measurements on Si nanocrystals (Si-NCs) formed by using the sonochemical method were carried out to investigate the charging effects of the Si-NCs. Transmission electron microscopy images and atomic force microscopy images showed that the Si-NCs were created inside the SiO2 layer. The C-V curve and the EFM image showed that the Si-NCs embedded in the SiO2 layer experienced charging effects. The macroscopic surface charge density determined from the C-V curve was in reasonable agreement with the microscopic local value obtained from the EFM image. The present results indicate that the EFM technique might provide a promising method for investigating charging effects in various kinds of nanocrystals embedded in the insulating layer. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:278 / 282
页数:5
相关论文
共 50 条
  • [31] Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers
    Chen, Keyong
    Feng, Xue
    Huang, Yidong
    DISPLAY, SOLID-STATE LIGHTING, PHOTOVOLTAICS, AND OPTOELECTRONICS IN ENERGY II, 2011, 7991
  • [32] Charging characteristics of Si nanocrystals embedded within SiO2 in the presence of near-interface oxide traps
    Ioannou-Sougleridis, V
    Nassiopoulou, AG
    SECOND CONFERENCE ON MICROELECTRONICS, MICROSYSTEMS AND NANOTECHNOLOGY, 2005, 10 : 39 - 42
  • [33] Electrical charging effect in room-temperature-ferromagnetic ZnMnO:N nanocrystals embedded into a SiO2 layer
    Lee, Sejoon
    Kim, Deuk Young
    Kang, Tae Won
    Cho, Hyung Koun
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 52 (06) : 1900 - 1904
  • [34] Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix
    de Jong, E. M. L. D.
    de Boer, W. D. A. M.
    Yassievich, I. N.
    Gregorkiewicz, T.
    PHYSICAL REVIEW B, 2017, 95 (19)
  • [35] Charge Storage Mechanism of Si Nanocrystals Embedded SiO2 Films
    Zhang, Wali
    Zhang, Sam
    Yang, Ming
    Chen, Tupei
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2009, 1 (03) : 176 - 181
  • [36] Optical and electrical properties of Si nanocrystals embedded in SiO2 layers
    Lee, S
    Shim, YS
    Cho, HY
    Kim, DY
    Kim, TW
    Wang, KL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (12): : 7180 - 7183
  • [37] Reliable LEDs fabricated from Si nanocrystals embedded SiO2
    López, M
    Garrido, B
    Perálvarez, M
    García, C
    Pellegrino, P
    Moreno, JA
    Morante, JR
    8TH WORLD MULTI-CONFERENCE ON SYSTEMICS, CYBERNETICS AND INFORMATICS, VOL XII, PROCEEDINGS: APPLICATIONS OF CYBERNETICS AND INFORMATICS IN OPTICS, SIGNALS, SCIENCE AND ENGINEERING, 2004, : 197 - 202
  • [38] Implantation of P ions in SiO2 layers with embedded Si nanocrystals
    Kachurin, GA
    Cherkova, SG
    Volodin, VA
    Kesler, VG
    Gutakovsky, AK
    Cherkov, AG
    Bublikov, A
    Tetelbaum, DI
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 222 (3-4): : 497 - 504
  • [39] Tunneling of electrons between Si nanocrystals embedded in a SiO2 matrix
    Seino, K.
    Bechstedt, F.
    Kroll, P.
    PHYSICAL REVIEW B, 2012, 86 (07)
  • [40] Photoluminescence of Si nanocrystals embedded in SiO2: Excitation/emission mapping
    Vaccaro, L.
    Spallino, L.
    Zatsepin, A. F.
    Buntov, E. A.
    Ershov, A. V.
    Grachev, D. A.
    Cannas, M.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (03): : 600 - 606