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- [1] 600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1251 - 1256
- [2] Commercialization of High 600V GaN-on-Silicon Power Devices SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1174 - 1179
- [3] The Characteristics and Modeling of 600V and 1200V SiC Power MOSFET 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 353 - 355
- [4] Deep trench isolation for 600V SOI power devices ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 497 - 500
- [5] Comparison of 600V Si, SiC and GaN power devices SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 971 - +
- [6] A versatile 600V BCD process for high voltage applications 2007 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLS 1 AND 2: VOL 1: COMMUNICATION THEORY AND SYSTEMS; VOL 2: SIGNAL PROCESSING, COMPUTATIONAL INTELLIGENCE, CIRCUITS AND SYSTEMS, 2007, : 1248 - +
- [7] 600V SOI gate driver IC with advanced level shifter concepts for medium and high power applications 2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10, 2007, : 2699 - +
- [8] 600V 30A SiC IPM with Low Power Loss for Motor Drive Applications IEICE TRANSACTIONS ON ELECTRONICS, 2017, E100C (10): : 938 - 941
- [9] Experimental results and simulation analysis of 250V Super Trench power MOSFET (STM) 12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, : 77 - 80
- [10] 600V SOI gate drive HVIC for medium power applications operating up to 200°C PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2005, : 55 - 58