Introduction of 250V and 600V GaAs power rectifiers for high performance power supply applications

被引:0
|
作者
Salih, A
Hadizad, P
Shumate, J
Ommen, J
机构
关键词
GaAs; power rectifiers; fast switching; high temperature; efficiency;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recent power supply performance enhancements have been achieved mainly by advances in packaging technology and incremental improvements in semiconductors and passive components. In particular, rectifier switching losses are posing limits far achieving desired high efficiency, high power density and low noise levels[1]. We have been involved in the development and manufacturing of GaAs power rectifiers at Motorola far the past five years as an enabling technology which allows combination of high voltage rand extremely fast switching speed[2-4]. In addition, the characteristics of GaAs do not degrade with temperature nearly as rapid as Si recovery time and leakage current. The GaAs rectifiers, which are provided in discrete packages or chips, have been used to switch power in the kilowatt range at frequency up to 1MHz. The device design simulation, reliability and electrical and application performance will be presented.
引用
收藏
页码:97 / 101
页数:5
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