D-π-A-π-D type thiazolo[5,4-d]thiazole-core organic chromophore and graphene modified PEDOT:PSS buffer layer for efficient bulk heterojunction organic solar cells

被引:31
|
作者
Nazim, M. [1 ]
Ameen, Sadia [1 ]
Akhtar, M. Shaheer [3 ]
Shin, Hyung-Shik [1 ,2 ]
机构
[1] Chonbuk Natl Univ, Sch Chem Engn, Solar Energy Res Ctr, Energy Mat & Surface Sci Lab, Jeonju 54896, South Korea
[2] Univ Calif Berkeley, Dept Chem & Biomol Engn, Berkeley, CA 94720 USA
[3] Chonbuk Natl Univ, New & Renewable Energy Mat Dev Ctr NewREC, Jeonju, South Korea
关键词
Buffer layer; Bulk heterojunction; Organic chromophore; Thiazolo; 5; 4-d]thiazole; Furan spacer; Graphene; Organic solar cells; PHOTOVOLTAIC PROPERTIES; CHARGE-TRANSFER; HOLE MOBILITY; THIN-FILMS; POLYMER; DYE; THIAZOLOTHIAZOLE; MOLECULE; SOLVENT; DONOR;
D O I
10.1016/j.solener.2018.06.087
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A new thiazolo[5,4-d]thiazole-core organic chromophore with furan spacer (TP-FTzF-TP) was synthesized and PEDOT:PSS buffer layer was modified by graphene (Gr) for the efficient solution-processed bulk-heterojunction (BHJ) small molecule organic solar cells (SMOSCs). The introduction of furan as spacer in the thiazolo[5,4-d]thiazole-core based organic chromophore tuned the absorption and the electrochemical properties. The synthesized TP-FTzF-TP chromophore exhibited good optical parameters and a suitable HOMO/LUMO values of - 5.33 eV/-3.15 eV. The synthesized organic chromophore with triphenylamine as a strong electron-donor and furan spacer promoted the charge transfer and charge extraction in fabricated SMOSCs. The modification of PEDOT:PSS by Gr considerably increased the roughness of thin film. The power conversion efficiency (PCE) of similar to 3.63% was achieved by fabricated SMOSC device with ITO/Gr-PEDOT:PSS/TP-FTzF-TP:PC60BM (1:2, w/w)/Au architecture. It was found that the Gr-PEDOT:PSS as a buffer layer significantly enhanced PCE by two time factor as compared to the SMOSC device (PCE = similar to 2.13%) with pristine PEDOT:PSS layer.
引用
收藏
页码:366 / 373
页数:8
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