Single metal/dual high-k gate stack with low Vth and precise gate profile control for highly manufacturable aggressively scaled CMISFETs

被引：25

作者：

Mise, N. ^{[1
]}

Morooka, T. ^{[1
]}

Eimori, T. ^{[1
]}

Kamiyarna, S. ^{[1
]}

Murayama, K. ^{[2
,3
]}

Sato, M. ^{[1
]}

Ono, T. ^{[1
]}

Nara, Y. ^{[1
]}

Ohji, Y. ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, 16-1 Onogawa, Tsukuba, Ibaraki, Japan

[2] Assoc Superadv Elect Technol, Nagoya, Aichi, Japan

[3] Hitachi Kenki FineTech Co Ltd, Bunkyo, Japan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418991

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have proposed a single metal/dual high-k (SMDH), low-V-th gate stack for aggressively scaled CMISFETs. The V-th is controlled by MgO- and Al2O3-containing high-k for n and pMISFETs, respectively The gate profile can be more easily controlled by taking advantage of a common W/TiN gate stack on both high-k's. We have successfully obtained 0.21 and -0.33 V o V-th for a 1-mu m long n and pMISFET by the proposed SMDH gate stacks. We also found that MgO suppresses PBTI and that it enhances electron mobility.

引用

页码：527 / +

页数：2

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