Effective charge carrier lifetime in CdHgTe variable-gap structures

被引：6

作者：

Osadchii, VM ^{[1
]}

Suslyakov, AO ^{[1
]}

Vasil'ev, VV ^{[1
]}

Dvoretsky, SA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 03期

关键词：

D O I：

10.1134/1.1187682

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effective charge carrier lifetime in n-type CdHgTe variable-gap structures is calculated with allowance for Auger recombination and recombination at dislocations. It is shown that introducing wide, variable-gap layers can eliminate the effect of surface recombination and yield long effective lifetimes, even for high densities of dislocations (above 10(7) cm(-2)). The calculated charge carrier lifetimes are in agreement with measurements on variable-gap structures grown by molecular-beam epitaxy. (C) 1999 American Institute of Physics. [S1063-7826(99)00803-0].

引用

页码：297 / 300

页数：4

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