A 140 GHz to 170 GHz Active Tunable Noise Source Development in SiGe BiCMOS 55 nm Technology

被引：0

作者：

Fiorese, Victor ^{[1
,2
]}

Goncalves, Joao Carlos Azevedo ^{[1
]}

Bouvot, Simon ^{[1
]}

Dubois, Emmanuel ^{[2
]}

Gaquiere, Christophe ^{[2
]}

Ducournau, Guillaume ^{[2
]}

Danneville, Francois ^{[2
]}

Lepilliet, Sylvie ^{[2
]}

Gloria, Daniel ^{[1
]}

机构：

[1] STMicroelectronics, Grenoble, France

[2] IEMN Inst Elect Microelect & Nanotechnol, Villeneuve Dascq, France

来源：

2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021) | 2021年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new approach of millimeter wave (mmW) integrated active noise source (NS) is introduced for noise characterization up to 170 GHz. This NS is based on a diode biased in avalanche regime in BiCMOS 55 nm (B55) technology from STMicroelectronics. In order to increase the noise sensitivity of setup using this NS, a two-stage cascode Low Noise Amplifier (LNA) composed of 4 high speed NPN transistors is cascaded at its output, targeting high available Excess Noise Ratios ( ENRav ) ENRav levels have been extracted, showing tunable values ranged between 0 dB to 37 dB in the 140-170 GHz frequency range.

引用

页码：125 / 128

页数：4

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