A 140 GHz to 170 GHz Active Tunable Noise Source Development in SiGe BiCMOS 55 nm Technology

被引：0
|
作者：
Fiorese, Victor [1 ,2 ]
Goncalves, Joao Carlos Azevedo [1 ]
Bouvot, Simon [1 ]
Dubois, Emmanuel [2 ]
Gaquiere, Christophe [2 ]
Ducournau, Guillaume [2 ]
Danneville, Francois [2 ]
Lepilliet, Sylvie [2 ]
Gloria, Daniel [1 ]
机构：
[1] STMicroelectronics, Grenoble, France
[2] IEMN Inst Elect Microelect & Nanotechnol, Villeneuve Dascq, France
来源：
2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021) | 2021年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new approach of millimeter wave (mmW) integrated active noise source (NS) is introduced for noise characterization up to 170 GHz. This NS is based on a diode biased in avalanche regime in BiCMOS 55 nm (B55) technology from STMicroelectronics. In order to increase the noise sensitivity of setup using this NS, a two-stage cascode Low Noise Amplifier (LNA) composed of 4 high speed NPN transistors is cascaded at its output, targeting high available Excess Noise Ratios ( ENRav ) ENRav levels have been extracted, showing tunable values ranged between 0 dB to 37 dB in the 140-170 GHz frequency range.
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页码：125 / 128
页数：4
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