Photoconduction studies on InGaAs HEMTs

被引：0

作者：

Schuermeyer, F ^{[1
]}

Cheskis, D

Goldman, RS

Wieder, HH

机构：

[1] Wright Lab, AADD, Wright Patterson AFB, OH 45433 USA

[2] Univ Michigan, Ann Arbor, MI 48109 USA

[3] Univ Calif San Diego, San Diego, CA 92103 USA

[4] Anadigics, Warren, NJ USA

来源：

COMPOUND SEMICONDUCTORS 1997 | 1998年 / 156卷

关键词：

D O I：

10.1109/ISCS.1998.711641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoconduction measurements made on In(0.53)G(0.47)As channel HEMTs indicate that the threshold energy for photoconduction corresponds to the bandgap of the quantum well and the absorption edge of the substrate. Many interband transitions are observed which can be correlated with the electronic subbands of the quantum well. Strong confinement of photogenerated holes is associated with a large modulation of the HEMT threshold voltage.

引用

页码：303 / 306

页数：4

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