The development of technology for growing InAs/GaSb superlattices by MOCVD

被引：0
|
作者：
Fedorov, I. V. [1 ,2 ]
Levin, R. V. [2 ,3 ]
Nevedomsky, V. N. [2 ]
机构：
[1] St Petersburg Natl Res Univ Informat Technol Mech, Kronverkskiy Pr 49, St Petersburg 197101, Russia
[2] Ioffe Inst, 26 Polytekhnicheskaya, St Petersburg 194021, Russia
[3] RAS, Submicron Heterostruct Microelect Res & Engn Ctr, 26 Polytekhnicheskaya, St Petersburg 194021, Russia
来源：
19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2018年 / 993卷
关键词：
GROWTH;
D O I：
10.1088/1742-6596/993/1/012018
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This study is dedicated to developing the technology for growing InAs/GaSb superlattices (SLs) by MOCVD. The structures were studied by transmission electron microscopy (TEM) and photoluminescence (PL) methods. We concluded that hetero-interface sharpness is not affected by the pause time between growth stages for separate layers or by switching the layer direction. A possible interpretation for the spectra of SLs was suggested.
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页数：4
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