Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells

被引：1
|
作者：
Chang, Shu-Hsuan [1 ]
Tsai, Miao-Chan [2 ]
Yen, Sheng-Horng [3 ]
Chang, Shu-Jeng [2 ]
Kuo, Yen-Kuang [4 ]
机构：
[1] Natl Changhua Univ Educ, Dept Ind Educ & Technol, Changhua 500, Taiwan
[2] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan
[3] Epistar Co Ltd, R&D Div, Hsinchu 300, Taiwan
[4] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XVIII | 2010年 / 7597卷
基金：
国家高技术研究发展计划(863计划);
关键词：
Photovoltaics; solar cell; multi-junction; numerical simulation;
D O I：
10.1117/12.841270
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, the high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells are investigated numerically by using the APSYS simulation program. The solar cell structure used as a reference was based on a published article by Geisz et al. (Appl. Phys. Lett. 91, 023502, 2007). By optimizing the layer thickness of the top and middle cells, the appropriate solar cell structure which possesses high sunlight-to-energy conversion efficiency is recommended. At AM1.5G and one sun, the conversion efficiency is improved by 2.3%. At AM0 and one sun, the conversion efficiency is improved by 4.2%. At AM1.5D and one sun, the conversion efficiency is improved by 1.3%. Furthermore, based on the optimized structures, this device can achieve efficiencies of more than 40% at high concentrations. For the triple-junction solar cell under AM1.5G solar spectrum, the conversion efficiency reaches 40.2% at 40 suns. For the device under AM0 solar spectrum, the conversion efficiency reaches 36.2% at 30 suns. For the device under AM1.5D solar spectrum, the conversion efficiency reaches 40.2% at 50 suns.
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页数：12
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