Effect of Degenerate Carriers on Si Band Gap Narrowing

被引：2
|
作者：
Mazhukin, V. I. [1 ,2 ]
Koroleva, O. N. [1 ,2 ]
Mazhukin, A. V. [1 ,2 ]
Aleshchenko, Yu. A. [2 ,3 ]
机构：
[1] Russian Acad Sci, Keldysh Inst Appl Math, Miusskaya Pl 4, Moscow 125047, Russia
[2] Natl Res Nucl Univ MEPhI, Kashirskoe Sh 31, Moscow 115409, Russia
[3] Russian Acad Sci, Lebedev Phys Inst, Leninskii Pr 53, Moscow 119991, Russia
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2017年 / 44卷 / 07期
基金：
俄罗斯科学基金会;
关键词：
silicon; carrier concentration; quantum and classical statistics; band gap narrowing; TEMPERATURE-DEPENDENCE; ENERGY-GAP; PLASMAS;
D O I：
10.3103/S106833561707003X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Various mechanisms causing band gap narrowing in strongly heated silicon are considered. In the high-temperature region, it becomes necessary to use Fermi-Dirac quantum statistics to describe carriers, since the silicon chemical potential appears in the valence band and in the conduction band at high carrier concentrations. It is shown that carrier degeneracy under conditions of sufficiently strong heating of intrinsic semiconductor causes strong band gap narrowing. The obtained values of band gap narrowing are compared to experimental results.
引用
收藏
页码：198 / 201
页数：4
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