Capacitive Substrate Coupling of Row-Column-Addressed 2-D CMUT Arrays

被引:0
|
作者
Engholm, Mathias [1 ]
Bouzari, Hamed [2 ]
Jensen, Jorgen Arendt [2 ]
Thomsen, Erik Vilain [1 ]
机构
[1] Tech Univ Denmark, Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark
[2] Tech Univ Denmark, Dept Elect Engn, Ctr Fast Ultrasound Imaging, DK-2800 Lyngby, Denmark
来源
2016 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS) | 2016年
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Row-column-addressed CMUT arrays suffer from low receive sensitivity of the bottom elements due to a capacitive coupling to the substrate. The capacitive coupling increases the parasitic capacitance. A simple approach to reduce the parasitic capacitance is presented, which is based on depleting the semiconductor substrate. To reduce the parasitic capacitance by 8 0 % the bulk doping concentration should be at most 10(12) cm-(3). Experimental results show that the parasitic capacitance can be reduced by 8 7 % by applying a substrate potential of 6 V relative to the bottom electrodes. The depletion of the semiconductor substrate can be sustained for at least 10 minutes making it applicable for row-column-addressed CMUT arrays for ultrasonic imaging. Theoretically the reduced parasitic capacitance indicates that the receive sensitivity of the bottom elements can be increased by a factor of 2.1.
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页数:4
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