Dependence of temperature gradient on growth rate in CZ silicon

被引：0

作者：

Natsume, A ^{[1
]}

Tanahashi, K ^{[1
]}

Inoue, N ^{[1
]}

Mori, A ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Res Inst Adv Sci & Technol, Sakai, Osaka 591, Japan

来源：

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/SIM.2000.939248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of temperature gradient in CZ-S! crystal on the growth rate is examined by analyzing the experimental result where growth rate was solely varied without changing any other conditions. Unreported data are reproduced using the heat balance equation at the interface. It is shown that the temperature gradient increases linearly with the growth rate. The mechanism is discussed in terms of the heat flow and the interface shape.

引用

页码：303 / 306

页数：4

共 50 条

[41] Temperature Dependence of Crystal Growth Rate for α and β Forms of Isotactic Polypropylene
Nakamura, Kayo
Shimizu, Satoko
Umemoto, Susume
Thierry, Annette
Lotz, Bernard
Okui, Norimasu
POLYMER JOURNAL, 2008, 40 (09) : 915 - 922
[42] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE
BEERS, AM
BLOEM, J
APPLIED PHYSICS LETTERS, 1982, 41 (02) : 153 - 155
[43] Temperature dependence of crystal growth rate for alpha and beta forms of isotactic polypropylene and their growth rate transitions
Shimizu, S.
Umemoto, S.
Okui, Norimasa
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2005, 230 : U3550 - U3550
[44] Neutron irradiation and annealing temperature effects of CZ- Silicon
Osmani, Nadjet
Boucenna, Ahmed
Cheriet, Abdelhak
2015 World Symposium on Mechatronics Engineering & Applied Physics (WSMEAP), 2015,
[45] Modeling of growth stress gradient effect on the oxidation rate at high temperature
Fan YANG1
Journal of Zhejiang University-Science A(Applied Physics & Engineering), 2010, 11 (10) : 789 - 793
[46] Modeling of growth stress gradient effect on the oxidation rate at high temperature
Yang, Fan
Liu, Bin
Fang, Dai-ning
JOURNAL OF ZHEJIANG UNIVERSITY-SCIENCE A, 2010, 11 (10): : 789 - 793
[47] Modeling of growth stress gradient effect on the oxidation rate at high temperature
Fan Yang
Bin Liu
Dai-ning Fang
Journal of Zhejiang University-SCIENCE A, 2010, 11 : 789 - 793
[48] Influences of temperature gradient and growth rate on CdZnTe crystal grown by VBM
Liu, Jun-Cheng
Wang, Pei
Guo, Xi-Ping
Jie, Wan-Qi
Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, 2003, 9 (03):
[49] Dependence of silicon thin-film growth characteristics on substrate temperature
Lin, Longzhi
Zhang, Haojie
Jiang, Shaoji
5TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR DETECTOR, IMAGER, DISPLAY, AND ENERGY CONVERSION TECHNOLOGY, 2010, 7658
[50] DEPENDENCE OF SURFACE RECOMBINATION RATE OF BASE OF SILICON DIODES ON TEMPERATURE AND INJECTION LEVEL
GAMAN, VI
ZAIDMAN, SA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1967, (02): : 156 - &

← 1 2 3 4 5 →