Dependence of temperature gradient on growth rate in CZ silicon

被引：0

作者：

Natsume, A ^{[1
]}

Tanahashi, K ^{[1
]}

Inoue, N ^{[1
]}

Mori, A ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Res Inst Adv Sci & Technol, Sakai, Osaka 591, Japan

来源：

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/SIM.2000.939248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of temperature gradient in CZ-S! crystal on the growth rate is examined by analyzing the experimental result where growth rate was solely varied without changing any other conditions. Unreported data are reproduced using the heat balance equation at the interface. It is shown that the temperature gradient increases linearly with the growth rate. The mechanism is discussed in terms of the heat flow and the interface shape.

引用

页码：303 / 306

页数：4

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