Direct Pulse Position Modulation of a 410 nm Semipolar GaN Laser Diode for Space Optical Communications

被引：0
|
作者：
Fridlander, Joseph [1 ]
Lee, Changmin [2 ]
Speck, James S. [2 ]
DenBaars, Steven P. [1 ,2 ]
Klamkin, Jonathan [1 ]
机构：
[1] Univ Calif Santa Barbara, Elect & Comp Engn Dept, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
来源：
2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A semipolar GaN laser was characterized for space optical communications, achieving a peak power of 160 mW. Periodic and random M-ary pulse position modulation sequences with pulse widths of 5 ns and 10 ns were demonstrated.
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页数：2
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