XPS study of fresh and oxidized GeTe and (Ge,Sn) Te surface

被引：82

作者：

Yashina, LV ^{[1
]}

Kobeleva, SP

Shatalova, TB

Zlomanov, VP

Shtanov, VI

机构：

[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia

[2] State Inst Rare Met, Moscow 113628, Russia

来源：

SOLID STATE IONICS | 2001年 / 141卷

关键词：

XPS; oxidation; VLS crystal growth; GeTe; (Ge; Sn)Te;

D O I：

10.1016/S0167-2738(01)00785-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The energies of Ge 2p(3/2), Ge 3d, Te 3d(5/2), Te 4d(5/2) and Sn 3d(5/2) photopeaks were measured for vacuum-cleaved GeTe and Ge0.9Sn0.1Te crystals, obtained by the 'vapour-solid liquid' technique (VLS). The oxidation of cleaved surfaces in air at ambient temperature and humidity was studied by X-ray photoelectron spectroscopy (XPS). The oxidation seems to take place even after few minutes of air exposure. The first stage of the oxidation results in entire Ge oxidation to the oxidation state 4 + and partial Te oxidation to the elemental state. The intermediate oxidation product is supposed to he GeO2-xTex. The second stage is slower than the first one, and it leads to further Te oxidation to 4 + oxidation state and also the significant surface enrichment in Ge. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：513 / 522

页数：10

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