SiGeBiCMOS technologies for power amplifier applications

被引：0
|
作者：
Johnson, JB [1 ]
Joseph, AJ [1 ]
Sheridan, D [1 ]
Malladi, RM [1 ]
机构：
[1] IBM Corp, Essex Jct, VT 05452 USA
来源：
GAAS IC SYMPOSIUM - 25TH ANNUAL TECHNICAL DIGEST 2003 | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon-germanium (SiGe) BiCMOS technology has advanced in many areas. In this paper, we discuss and illustrate the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier applications. The experimental results for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented with focus on the 0.5 mum SiGe BiCMOS node. Implications of recent high-performance SiGe HBT scaling achievements for BiCMOS technologies targeting wireless power amplifier applications are considered.
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收藏
页码：179 / 182
页数：4
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