Al2O3 optimization for Charge Trap Memory Application

被引：0
|
作者：
Scozzari, C. [1 ]
Albini, G. [1 ]
Alessandri, M. [1 ]
Amoroso, S. [2 ]
Bacciaglia, P. [1 ]
Del Vitto, A. [1 ]
Ghidini, G. [1 ]
机构：
[1] STMicroelect, Via C Olivetti, Agrate Brianza, Italy
[2] Politecn Milan, Milan, Italy
来源：
ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Aim of this work is the study the crystallization treatment of Alumina used as blocking oxide in Charge Trap memories. We have found that thermal treatment before gate deposition is able to crystallize Alumina giving better erase and write efficiency than any treatment after gate deposition, without degradation of the memory stack.
引用
收藏
页码：191 / +
页数：2
相关论文
共 50 条
  • [1] Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer
    Nabatame, T.
    Ohi, A.
    Ito, K.
    Takahashi, M.
    Chikyo, T.
    DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2014, 61 (02): : 293 - 300
  • [2] Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices
    Lee, Sejoon
    Song, Emil B.
    Kim, Sungmin
    Seo, David H.
    Seo, Sunae
    Kang, Tae Won
    Wang, Kang L.
    APPLIED PHYSICS LETTERS, 2012, 100 (02)
  • [3] Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices
    Lee, Sejoon
    Song, Emil B.
    Kim, Sung Min
    Lee, Youngmin
    Seo, David H.
    Seo, Sunae
    Wang, Kang L.
    APPLIED PHYSICS LETTERS, 2012, 101 (24)
  • [4] The effect of fixed oxide charge in Al2O3 blocking dielectric on memory properties of charge trap flash memory devices
    Jeon, S
    Kim, C
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (08) : G265 - G267
  • [5] Trapping mechanism of charge trap capacitor with Al2O3/High-k/Al2O3 multilayer
    Nabatame, Toshihide
    2017 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT 6), 2017, 79 (01): : 131 - 138
  • [6] Improved memory characteristics of charge trap memory by employing double layered ZrO2 nanocrystals and inserted Al2O3
    Tang, Z. J.
    Li, R.
    Zhang, X. W.
    Hu, D.
    Zhao, Y. G.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (04)
  • [7] Characterization of charge-trap memory chip of HfO2/Al2O3 multi-layers
    Tang, Zhenjie, 1600, Science Press (34):
  • [8] Impact of the interfaces in the charge trap layer on the storage characteristics of ZrO2/Al2O3 nanolaminate-based charge trap flash memory cells
    Tang, Zhenjie
    Zhu, Xinhua
    Xu, Hanni
    Xia, Yidong
    Yin, Jiang
    Liu, Zhiguo
    Li, Aidong
    Yan, Feng
    MATERIALS LETTERS, 2013, 92 : 21 - 24
  • [9] Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
    Nabatame, Toshihide
    Ohi, Akihiko
    Ito, Kazuhiro
    Takahashi, Makoto
    Chikyo, Toyohiro
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 33 (01):
  • [10] Charge transport in Al2O3
    Storchak, VG
    Brewer, JH
    Morris, GD
    HYPERFINE INTERACTIONS, 1997, 105 (1-4): : 277 - 282
12345