Characterization of charge-trap memory chip of HfO2/Al2O3 multi-layers

被引：0
|
作者：
机构：
[1] Tang, Zhenjie
[2] Yin, Jiang
[3] Zhu, Xinhua
来源：
Tang, Zhenjie | 1600年 / Science Press卷 / 34期
关键词：
Multilayer films;
D O I：
10.13922/j.cnki.cjovst.2014.12.12
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics
    Kim, Hogyoung
    Yun, Hee Ju
    Choi, Seok
    Choi, Byung Joon
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (04):
  • [2] A non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack for in-situ storage applications
    Jingyu Li
    Heng Zhang
    Yi Ding
    Jiayi Li
    Shuiyuan Wang
    David Wei Zhang
    Peng Zhou
    Science Bulletin, 2019, 64 (20) : 1518 - 1524
  • [3] A non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack for in-situ storage applications
    Li, Jingyu
    Zhang, Heng
    Ding, Yi
    Li, Jiayi
    Wang, Shuiyuan
    Zhang, David Wei
    Zhou, Peng
    SCIENCE BULLETIN, 2019, 64 (20) : 1518 - 1524
  • [4] Electrical properties of HfO2 charge trap flash memory with SiO2/HfO2/Al2O3 engineered tunnel layer
    Oh, Se-Man
    You, Hee-wook
    Kim, Kwan-Su
    Lee, Young-Hie
    Cho, Won-Ju
    CURRENT APPLIED PHYSICS, 2010, 10 (01) : E18 - E21
  • [5] Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices
    Lee, Sejoon
    Song, Emil B.
    Kim, Sung Min
    Lee, Youngmin
    Seo, David H.
    Seo, Sunae
    Wang, Kang L.
    APPLIED PHYSICS LETTERS, 2012, 101 (24)
  • [6] Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices
    Lee, Sejoon
    Song, Emil B.
    Kim, Sungmin
    Seo, David H.
    Seo, Sunae
    Kang, Tae Won
    Wang, Kang L.
    APPLIED PHYSICS LETTERS, 2012, 100 (02)
  • [7] Effects of Composition on the Memory Characteristics of (HfO2)(x)(Al2O3)(1-x) Based Charge Trap Nonvolatile Memory
    Zhenjie Tang
    Ma Dongwei
    Zhang Jing
    Jiang Yunhong
    Wang Guixia
    Zhao Dongqiu
    Rong Li
    Jiang Yin
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2014, 15 (05) : 241 - 244
  • [8] Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe
    Wu, D
    Lu, J
    Vainonen-Ahlgren, E
    Tois, E
    Tuominen, M
    Östling, M
    Zhang, SL
    SOLID-STATE ELECTRONICS, 2005, 49 (02) : 193 - 197
  • [9] Thickness dependence of Al2O3/HfO2/Al2O3 stacked tunneling layers on gadolinium oxide nanocrystal nonvolatile memory
    Wang, Jer-Chyi
    Chen, Chia-Hsin
    Lin, Chih-Ting
    MICROELECTRONIC ENGINEERING, 2015, 138 : 52 - 56
  • [10] Gadolinium oxide nanocrystal nonvolatile memory with HfO2/Al2O3 nanostructure tunneling layers
    Wang, Jer-Chyi
    Lin, Chih-Ting
    Chen, Chia-Hsin
    NANOSCALE RESEARCH LETTERS, 2012, 7
12345