Double injection current transients in a-Si:H

被引：0
|
作者：
Nekrasas, N. [1 ]
Genevicius, K. [1 ]
Juska, G. [1 ]
机构：
[1] Vilnius State Univ, LT-10222 Vilnius, Lithuania
来源：
ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 03期
关键词：
D O I：
10.12693/APhysPolA.113.845
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work we present results of both computer modelling and experimental studies of double injection current transients in amorphous hydrogenated silicon thin layers.
引用
收藏
页码：845 / 849
页数：5
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