Graphene/SiC interface control using propane-hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111)

被引：4

作者：

Michon, A. ^{[1
]}

Roudon, E. ^{[1
]}

Portail, M. ^{[1
]}

Lefebvre, D. ^{[1
]}

Vezian, S. ^{[1
]}

Cordier, Y. ^{[1
]}

Tiberj, A. ^{[2
]}

Chassagne, T. ^{[3
]}

Zielinski, M. ^{[3
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, Rue Bernard Gregory, F-06560 Valbonne, France

[2] Univ Montpellier 2, CNRS, Lab Charles Coulomb, F-34090 Montpellier, France

[3] Savoie Technolac, NOVASIC, F-73375 Le Bourget Du Lac, France

来源：

HETEROSIC & WASMPE 2011 | 2012年 / 711卷

关键词：

Graphene; 6H-SiC; 3C-SiC/Si; CVD; EPITAXIAL GRAPHENE; EPILAYERS;

D O I：

10.4028/www.scientific.net/MSF.711.253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have grown graphene on 6H-SiC(0001) and 3C-SiC(111)/Si(111) using propane-hydrogen CVD. This contribution studies the effects of pressure on graphene growth and on its structural properties studied through low energy electron diffraction. We show that varying pressure allows to control the formation of graphene on a (6 root 3x6 root 3)-R30 degrees interface reconstruction (low pressure) or graphene with in-plane rotational disorder (high pressure) on both 6H-SiC(0001) and 3C-SiC(111). The effects of the SiC morphology before graphene growth are discussed in order to explain the differences observed between polytypes.

引用

页码：253 / +

页数：2

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