The preferential, adsorption of Ge on Si(111) 7 x 7 surface

被引：8

作者：

Yan, L ^{[1
]}

Zhang, YP

Peng, YP

Pang, SJ

Gao, HJ

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Lab Vacuum Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing Lab Vacuum Phys, Beijing 100080, Peoples R China

来源：

ACTA PHYSICA SINICA | 2001年 / 50卷 / 11期

关键词：

scanning tunneling microscopy; Si(111) 7 x 7 surface; Ge cluster;

D O I：

10.7498/aps.50.2132

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ge preferential adsorption on Si(111) 7 x 7 surface at the initial stage has been investigated by ultra - high vacuum scanning tunneling microscopy (UHV - STM). We demonstrate that there is a critical nucleus for the adsorbed Ge clusters on Si(111) 7 x 7 surface. The center sites of the Ge clusters are located in the areas encircled by three adatoms. Moreover, on the Ge, clusters the local density of states near the Fermi level is drastically reduced, compared with that far from the Fermi level.

引用

页码：2132 / 2136

页数：5